Barrier Potential Silicon
Easyphysics
Approximate barrier potential of silicon PN junction at room temperature?
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Solution
Incorrect! Answer:
0.7 V
- Barrier Potential (Vb): Due to the diffusion of carriers across the junction, a depletion layer forms with a built-in electric field.
- Dopant Influence: The magnitude of this barrier depends on the semiconductor material and the doping concentration.
- Standard Values:
- For Silicon (Si) PN junction: Vb≈0.7 V at room temperature.
- For Germanium (Ge) PN junction: Vb≈0.3 V.
- Conduction: A silicon diode does not conduct significantly in the forward direction until the applied voltage exceeds this threshold.
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About This Question
- Subject
- physics
- Chapter
- semiconductor devices
- Topic
- barrier potential silicon
- Difficulty
- Easy
- Year
- 2025
Solution
Correct Answer:
0.7 V
- Barrier Potential (Vb): Due to the diffusion of carriers across the junction, a depletion layer forms with a built-in electric field.
- Dopant Influence: The magnitude of this barrier depends on the semiconductor material and the doping concentration.
- Standard Values:
- For Silicon (Si) PN junction: Vb≈0.7 V at room temperature.
- For Germanium (Ge) PN junction: Vb≈0.3 V.
- Conduction: A silicon diode does not conduct significantly in the forward direction until the applied voltage exceeds this threshold.
This easy difficulty physics question is from the chapter semiconductor devices, covering the topic of barrier potential silicon. It appeared in the 2025 exam.
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